LABORATORY OF RADIATION PHYSICS

The investigation of recrystallization proceeding in implanted semiconductors under strong electromagnetic or corpuscular irradiation. The basic physical principles of the pulsed ion-beam, laser and photon annealing of ion-doped silicon and gallium arsenide layers have been elaborated. Record high concentrations (up to 3*10²¹ cm^-3 phosphorus atoms in Si and 9*10¹⁹ silicon atoms in GaAs) of dopants in the electroactive state have been obtained. A pioneer investigation of the silicon local melting has been performed in situ and the relevant physical model has been suggested.

The investigation of radiation-induced processes in carbon-based nanostructured materials. A unique experimental unit for the ion-beam stimulated deposition of diamondlike carbon films has been created and the role of the energy and type of the scattering ions  as well as the influence of the atmospheric composition on the phase constitution, electrical and optical properties, the size and the concentration of diamondlike clusters (p-clusters) have been studied. The films were irradiated with ions of various types, and the behavior of the p-clusters (their concentration and size) was examined. It has been established that structural and phase transformations in carbon-based nanostructures, triggered by the ion bombardment, are extremely responsive to the irradiation regime used and particularly depend on the mass and the chemical nature of the ions, as opposed to transformations in structurally homogeneous materials. 

The investigation of ion synthesis of the silicides in silicon and of 3d-metal particles in polymers. The main mechanisms in the ion-beam synthesis (IBS) of new phases in nonmetallic matrices have been established. It has been understood how the structure of the target (on molecular and supramolecular levels), ion-beam parameters and conditions of the implantation affect nucleation and growth of new phases. On the basis of these data we obtained, through the IBS technique, thin films and nanostructures of various phase constitutions in nonmetallic matrices, including silicides of transition metals in silicon and Si_1-xGe_x solid solution, ferromagnetic metal/polymer composite materials in polymethyl methacrylate, polyethylene terephthalate and polystyrene, and high-temperature superconductors. Features of IBS of complex silicides have been studied for the case when ions of two different types are implanted simultaneously. Anomalous depth distribution profiles of implanted ions have been observed and a relevant physical model for their interpretation has been proposed.

The investigation of the processes of ion implantation into viscous media (organic matrices). Strong influence of the relaxation state of the organic substratum subjected to irradiation on the ion implantation-based synthesis of thin granular films and doped nanostructures in its body has been predicted and experimentally confirmed. A new parameter - viscosity of the matrix has been introduced into physics and practice of ion implantation for the first time. This made it possible not only to step up the control over the structure and the phase constitution of synthesized films but also to considerably expand possibilities in studying the main physical laws governing nucleation and growth of new phases in nonequilibrium conditions. Novel metal/polymer composite materials (Fe-, Co-, Ag-epoxides, siloxanes) have been synthesized and their physical and structural properties have been investigated. It has been established that the mechanisms of nucleation and growth of metallic particles in the body of the polymer as well as their magnetic, optical and electrical properties are strongly dependent on the molecule mobility and the kinetics of the polymerization of the organic target at the moment of implantation.

The laboratory is expanding its experimental facilities. Currently a pulsed ion accelerator is being launched.      

• Kazan State University, Kazan
• Kazan State Technological University, Kazan
• Kazan State Technical University, Kazan
• Federal Scientific Production Center "State Institute of Applied Optics", Kazan
• P.N.Lebedev Physical Institute of RAS, Moscow
• Moscow State University, Moscow
• Institute of Physics of Semiconductors of the Siberian Branch of RAS, Novosibirsk
• Institute of Technical Chemistry of the Urals Branch of RAS, Perm'
• Research Institute in Tomsk Politechnical Institute, Tomsk
• Byelorussian State University, Minsk, Byelorussia
• Kharkov National University, Kharkov, Ukraine
• University of Sussex, Sussex, Brighton, England
• Aachen Technical University, Aachen, Germany
• Gebze Institute of Technology, Gebze, Turkey

1. Petukhov V., Zhikharev V., Ibragimova M., Zheglov E., Bazarov V., Khaibullin I.: Ion Synthesis of Thin Granular Ferromagnetic Films in Polymethylmethacrylate. Solid State Commun. 97, 361 (1996)
2. Abdullin S.N., Stepanov A.L., Khaibullin R.I., Valeev V.F., Osin Yu.N., Khaibullin I.B.: Mechanisms of the Formation of a Metal Thin Film in an Epoxide Composite Implanted with Cobalt Ions. Fiz.Tverd.Tela 38, 2574 (1996), Phys.Solid.State (USA) 38, 1412 (1996) (Translation of Fizika tverdogo tela).
3. Bazarov V.V., Petukhov V.Yu., Shustov V.A., Faizrakhmanov I.A., Zheglov E.P., Zhikharev V.A., Khaibullin I.B.: Formation of Thin Superconducting YBaCuO Layers by Oxygen Implantation. Physica C 282, 589 (1997)
4. Gumarov G.G., Petukhov V.Yu., Shustov V.A., Khaibullin I.B.: Effect of Ion Current Density on the Phase Composition of Ion Beam Synthesized Iron Silicides. Nucl. Instrum. Methods Phys. Res. B 127/128, 321 (1997)
5. Faizrakhmanov I.A., Bazarov V.V., Zhikharev V.A., Khaibullin I.B.: Optical and Electrical Properties of C⁺ Implanted Amorphous Diamondlike Carbon Films. Nucl. Instrum. Methods Phys. Res. B 127/128, 719 (1997)
6. Ibragimova M.I., Baryshev N.S., Petukhov V.Yu., Khaibullin I.B.: Peculiarities of Carrier Recombination in Cd_xHg_1-xTe Implanted Consequently with Ag+(Cu+) and Xe+ Ions. Nucl. Instrum. Methods Phys. Res. B 127/128, 471 (1997)
7. Bayazitov R.M., Antonova L.Kh., Khaibullin I.B., Remnev G.E.: Pulsed Ion Beam Formation of Highly Doped GaAs Layers. Nucl. Instrum. Methods Phys. Res. B 139, 418 (1998)
8. Fattakhov Y.V., Galyautdinov M.F., L'vova T.N., Khaibullin I.B.: The Dynamics of Recrystallization and Melting of Implanted Silicon Irradiation by Powerful Light Pulses. Vacuum 51, 255 (1998)
9. Faizrakhmanov I.A., Bazarov V.V., Zhikharev V.A., Khaibullin I.B.: The Investigation of Optical and Electrical Properties of N⁺ Implanted Amorphous Diamondlike Carbon Films. Nucl. Instrum. Methods Phys. Res. B 148, 669 (1999)
10. Khaibullin R.I, Osin Yu.N., Stepanov A.L., Khaibullin I.B.: Synthesis of Metal/Polymer Composite Films by Implantation of Fe and Ag Ions in Viscous and Solid State Silicon Substrates. Nucl. Instrum. Methods Phys. Res. B 148, 1023 (1999)